PART |
Description |
Maker |
SCT3030ALGC11 |
N-channel Silicon Carbide Power MOSFET
|
ROHM
|
FBS10-06SC IXYSCORP-FBS10-06SC |
Silicon Carbide Schottky Rectifier Bridge in ISOPLUS i4-PAC 3 A, 600 V, SILICON CARBIDE, BRIDGE RECTIFIER DIODE
|
IXYS, Corp. IXYS[IXYS Corporation]
|
SHD626031 SHD626031D SHD626031N SHD626031P SHD6260 |
HERMETIC SILICON CARBIDE RECTIFIER 8 A, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA
|
Sensitron Semiconductor
|
STPSC406 STPSC406B-TR STPSC406D |
4 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE 600 V power Schottky silicon carbide diode
|
STMicroelectronics
|
Q67040-S4374 SDB20S30 Q67040-S4419 SDP20S30 SDB20S |
Silicon Carbide Schottky Diodes - 2x10A diode in TO263 package Silicon Carbide Schottky Diodes - 2x10A diode in TO220-3 package From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
GM194A |
N P N S I L I C O N P L AN A R M E D I UM POWE R T R A N S I S T O R
|
E-Tech Electronics LTD
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
CMF10120D |
Silicon Carbide Power MOSFET
|
Cree, Inc
|
C3M0065090J |
Silicon Carbide Power MOSFET
|
Cree, Inc
|
SHDC626052 SHDC626052D SHDC626052N SHDC62605207 |
HERMETIC SILICON CARBIDE RECTIFIER
|
Sensitron
|
IDM10G120C5-15 |
Silicon Carbide Schottky Diode
|
Infineon Technologies A...
|
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